Up: Einstein A-coefficients for rotational SiC, SiC SiC
In a representation in which the axis of quantization is along a-axis of
inertia, the expression for the line strength for a-type molecule is
given by
| ![\begin{displaymath}
S(J^\prime_{\tau^\prime} \rightarrow J_\tau) = \mu^2 (2J + 1...
... K}g^{J^\prime}_{\tau^\prime K}
C^{J^\prime K}_{JK10} \Big]^2 \end{displaymath}](/articles/aas/full/1998/13/ds1461/img18.gif) |
(2) |
where the C's are Clebsch-Gordan coefficients. The transition
probabilities follow directly from the line strength
(Chandra & Sahu 1993)
|  |
(3) |
where
corresponds to the energy difference of the two levels.
The rotational constants and quartic and sextic centrifugal
distortion coefficients taken for Silicon Dicarbide from
Bogey et al. (1984)
are presented
in Table 1. Table 1 carries also the constants for 29SiC2 and
30SiC2 isotopomers. The distortional constants for 29SiC2
and 30SiC2 are the same as for 28SiC2
(Cernicharo et al. 1986).
The computed value of Einstein A-coefficients between the levels up to
51 cm-1 are given in Tables 2, 3 and 4 for 28SiC2
(Silicon Dicarbide),
29SiC2 and 30SiC2, respectively for ortho-rotational
transitions in
the ground vibrational state.
Here, the primed parameters correspond to the upper level
of the transition whereas the unprimed correspond to the lower level of transition.
Table 5 shows the radiative life times of the levels which are
calculated by using Einstein A-coefficients.
Up: Einstein A-coefficients for rotational SiC, SiC SiC
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