Up: Atomic data from the
Since there is good agreement between the 24-state results by IP-X and
those from
the 5-state calculation by
Johnson & Kingston (1990)
for electron temperatures below 24000 K,
we have rerun the calculation with the original IP-X target
representation. Since we are interested in the high-temperature behaviour
of the effective collision strength in order to check the match with
the Coulomb-Born limit quoted by BCT,
we now extend the calculation of
collision strengths to 100 Ryd. Convergence of the partial-wave expansion
is ensured by examining the partial collision strength L profile
at the highest energy point (100 Ryd)
and by topping up with a simple geometric series procedure at every energy
point.
In Fig. 1 we plot the partial collision strength as a function of
L at both 10 Ryd and 100 Ryd. This plot illustrates the computational
difficulty
in obtaining a converged collision strength for this transition particularly
as the energy is increased. While at 10 Ryd there is a well defined peak
at around L=4, at 100 Ryd the expansion becomes a flat and
broad plateau for
. Using a geometric series top-up in this
L
range would certainly lead to a significant overestimate of the total collision
strength at the high energies. At 100 Ryd, say,
it is only for L>30 that the top-up procedure can be safely
implemented, and the latter amounts to a barely acceptable 20%
of the total collision strength.
In Fig. 2 the total collision strength for this transition is plotted using the
reduced energy method of BT. A further difficulty with this transition
becomes apparent: for the non-resonant region the collision strength,
rather than flattening out as in most quadrupole transitions, displays a slow
increase. As discussed before, this effect makes the management of the
convergence of the partial wave expansion
particularly difficult at the high
energies.
It also causes difficulties in determining the high-temperature trend of the
effective collision strength as will be shown below. The present reduced
collision strength seems to converge
to the point
which is in reasonable
agreement (
%) with the high-energy Coulomb-Born limit of 1.64
estimated by BCT.
![\begin{figure}
\begin{center}
\includegraphics [width=8.5cm]{1564f1.eps}
\end{center}\end{figure}](/articles/aas/full/1998/20/ds1564/Timg31.gif) |
Figure 1:
Partial collision strength for the D S transition in Ar III
as a function of the total orbital angular momentum L. Squares: 10 Ryd.
Circles: 100 Ryd |
![\begin{figure}
\begin{center}
\includegraphics [width=8.5cm]{1564f2.eps}
\end{center}\end{figure}](/articles/aas/full/1998/20/ds1564/Timg32.gif) |
Figure 2:
Total collision strength for the D S transition in Ar III plotted as a function
of the reduced energy with C=9.0. It is seen that the non-resonant
region increases slowly and approaches the point  |
![\begin{figure}
\begin{center}
\includegraphics [width=8.5cm]{1564f3.eps}
\end{center}\end{figure}](/articles/aas/full/1998/20/ds1564/Timg33.gif) |
Figure:
Effective collision strength for the D S transition in Ar III as a function of the
reduced
temperature with a) C=0.2 and b) C=5.0.
Circles: present calculation.
Squares: IP-X. Crosses:
Johnson & Kingston (1990). Filled square: High-energy
Coulomb-Born limit by BCT |
In Fig. 3 the present reduced effective collision strength is compared
with earlier work, and in Table 1 we list the present effective collision
strength in the extended range of
and compare them with
the data by IP-X. It may be seen that
the low-temperature regime is dominated by the
contribution from resonances (see Fig. 2), particularly a resonance sitting
at threshold that is responsible for the high value of
.
Table 1:
Comparison of present
effective collision strengths for the
D
S transition
in Ar III with those in IP-X. Electron temperatures are given in K.
It may be seen that discrepancies are not larger than 25%
|
|
The good overall agreement (10%) at low temperatures with
the work by Johnson & Kingston (1990) is reinforced.
It is shown that the differences with IP-X, mainly due to the neglect of
partial collision strengths for L>9 at the higher energies, are less than
10%
up to
, they are well below 20% up to
and they
reach
% only towards the upper limit of the temperature range considered in
IP-X. In our opinion, such differences are consistent with the level of
accuracy (
%) claimed in IP-X for the lower members of the
Si and S isoelectronic sequences. Furthermore, it is found that
the fairly steep climb of the reduced effective collision strength to its
high-temperature limiting value of
only starts at relatively high temperatures,
and
certainly stands out from the gently oscillating patterns at intermediate
temperatures. As shown in Fig. 3, the characteristic features in each
temperature regime can be enhanced by a suitable choice of the scaling
parameter C. For instance, in Fig. 3b we have used a C parameter
similar to that used by BCT which stretches the low-temperature
regime suggesting a value of
for IP-X; with this
choice
of scaling parameter the high-temperature behaviour of the present data
appears almost as a vertical climb. It is worth mentioning that an estimate
of the effective collision strengths for
T>106.5 K requires an energy range greater than 100 Ryd.
Therefore a top-up procedure was introduced where the collision strength for
E>100 Ryd was assumed constant at
.
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