The RQDO oscillator strenghts calculated for the 
, 
, 
, and 
transitions in the silicon isoelectronic
sequence are in reasonable general agreement with the results of the rather
more sophisticated MCDF calculations, which account for inner and outer
correlation, and for relativistic effects, as well as with a few
theoretical data found in the literature for the individual lines. An
independent proof of the reliability of our RQDO results except for the very
highly charged ions is the correct systematic trends followed by most of our
line f-values.
Overall, we seem to find reasons to be hopeful about the posibilities offered by the RQDO formalism for predicting spectral properties of many-valence electron atomic systems which are of interest in astrophysics and nuclear fusion research, whenever the complications brought about by the presence of configuration interaction are not too severe. One attractive feature of the RQDO formalism is its analiticity, which implies low computational expense and avoidance of the numerous convergence problems which are common in the MCDF approach.
Acknowledgements
This work has been supported by the D.G.I.C.Y.T. of the Spanish Ministry of Education and Science, under Project No. PB94-1314-C03-03.