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5. Performance capability

5.1. Absorption efficiency and reflectivity

The STJ has a very high efficiency to the absorption of photons of wavelength ranging from the ultraviolet to the near infrared. Figure 4 (click here)a illustrates the absorption efficiency for single photons in Nb, Al and Hf films of thickness 100 nm based on the optical constants of the materials (Weaver & Lynch 1973; Weaver et al. 1981) and indirectly confirmed for Nb-based devices through optical transmission measurements in our laboratory. From 100 nm to tex2html_wrap_inline1259 the absorption efficiency is over 80 per cent for all three materials. The surface reflectivity of these films is shown in Fig. 4 (click here)b. While pure Al has a very high reflectivity from the ultraviolet to the near infrared, typically over 90 per cent, the other two superconductors in Fig. 4 (click here)b have a much improved capability. Hf in particular has a reflectivity below 30 per cent in the ultraviolet and maintains a value below 55 per cent out to tex2html_wrap_inline1261. For Nb, where an optically-sensitive STJ now exists, the reflectivity is below 50 per cent out to 700 nm. The reflectivity, which affects not only the superconducting thin film but, depending on the mode of illumination (front illumination directly onto the top polycrystalline superconducting film or back illumination through the substrate onto the epitaxial base film), also the substrate, and substrate to base film interface, can be reduced through the use of anti-reflection coatings, albeit at the expense of bandwidth and with device fabrication constraints. Such coatings are currently under development.

  figure372
Figure 4: The theoretical absorption efficiency, tex2html_wrap_inline1263 a) and surface reflectivity tex2html_wrap_inline1265 b) in a 100 nm film as a function of photon wavelength for Nb, Al and Hf. The reflectivity can be further decreased through the use of an anti-reflection coating at the expense of reducing the wavelength coverage. The overall quantum efficiency of the device for the case of front illumination is tex2html_wrap_inline1267.

Further reduction in the electronic noise should lead to resolutions approaching the theoretical limits shown in Fig. 1 (click here). The resulting spectroscopic performance is illustrated in Fig. 5 (click here) (tex2html_wrap_inline1269) applied to emission line spectra from neutral (I) to quadruply ionised (V) atoms of oxygen and carbon. The line strengths (not corrected for abundances) and wavelengths are taken from Weast (1981). For the ion species III-V the line strengths should be considered as qualitative estimates of the relative strengths between different lines from the same atom. The intensity of the ionised atoms (II-V) relative to the neutral atom evidently depends on the excitation conditions. Figure 5 demonstrates that even the Nb device has a significant spectroscopic capability with many of the key lines of astrophysical interest being clearly resolvable.

The reflectivity of Al junctions is so high that the overall efficiency would limit considerably its usefulness at these wavelengths. While no devices based solely on Hf yet exist, it has formed the basis for some tunnel junction work (Morohashi et al. 1992). Nb- and Ta-based devices are however more standard, requiring only some improvements to achieve the theoretical limited resolutions of Fig. 1 (click here). From Fig. 5 (click here) however it is clear that an excellent spectroscopic capability would exist for devices based on Hf, with key transitions from the same ion as well as different ionic species being possible to resolve and identify.

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Figure 5: The simulated tunnel-limited response tex2html_wrap_inline1271 (tex2html_wrap_inline1273) from either a pure Nb based STJ (left two diagrams) or Hf based STJ (right two diagrams) to the principle emission lines from oxygen (top pair) and carbon (bottom pair). The strongest lines from neutral and ionised species are marked. Note the photon scale is different in each case to highlight the various line features. For all these spectra the bin size was set at 0.1 nm. No abundances are included in these simulations

5.2. Count rates

Another significant strength of superconducting tunnel junctions is the inherent speed of the device. The time taken to complete the full conversion of the photon energy into quasiparticles, including their relaxation down to an energy equal to the bandgap of the absorbing material, is only a few ns. The quasiparticle confinement time in the film is complex and depends also on the superconducting material properties, bias voltage and film thickness. Based on the work of de Korte (1992) the confinement time in a single film can be written:
equation391
where N(0) is the single spin electronic density of states at the Fermi energy, e the electron charge, tex2html_wrap_inline1283 is the normal state barrier resistance, tex2html_wrap_inline1285 is the volume of the film i and tex2html_wrap_inline1289 is the bias voltage applied across the two films. Thus for a device designed to provide a single tunnel from a 100 nm thick film of Nb across a barrier having a typical resistivity tex2html_wrap_inline1291 cmtex2html_wrap_inline1293, the average confinement time is of order 100 ns, scaling with the mean number of transfers n across the barrier. The parameter tex2html_wrap_inline1297 therefore represents approximately the intrinsic time resolution of the device.

Thus, in theory, superconducting tunnel junctions could be operated as photon counting detectors at rates of order tex2html_wrap_inline1299 to tex2html_wrap_inline1301 Hz depending on the device geometry and n. In practice Lumb et al. (1995) have shown rates as high as tex2html_wrap_inline1305 kHz can be achieved without any intrinsic spectroscopic degradation in the device, being limited by the processing speed of the analogue electronics and substrate noise associated with the X-ray photon energy used in the experiment. The electronics however will be the final limitation to the very important photon count rate capability at optical wavelengths. These rates will still allow very high speed photometry on objects to be limited primarily by the collecting aperture of the telescope as well as the observation of fields containing a objects having a wide dynamic range in intensity.

Since each photon results in an electrical pulse whose amplitude is directly proportional to the photon energy, and a pulse risetime which is characteristic of a single photoabsorption event in the film, the device has intrinsic background rejection capabilities. Background from cosmic rays can be vetoed either by an upper energy threshold discriminator or through the risetime signature.

For a panoramic imaging STJ camera covering a wide field of view a number of approaches can be considered. It must however be noted that each STJ detector is independent and requires its own analogue electronics chain including the preamplifier. This is a considerable limitation, the solution to which still needs to be fully addressed. Nevertheless, simple limited close-packed arrays of tex2html_wrap_inline1307 STJs are already under development by our group (Rando et al. 1996), while Perryman et al. (1993) already proposed more complex schemes in an attempt to reduce the total number of detectors and associated electronic chains while maintaining field coverage.

Although the count rates that can be handled in photon counting mode are already expected to be very high, there may be applications (for example, at longer wavelengths, for very bright objects, or for large telescope apertures) where even these limits are exceeded. Under these conditions, it is likely that the relevant junctions can be read out in an analogue mode, in which the steady-state current is measured, rather than the pulse corresponding to an individual photon. In these circumstances, the STJ would simply provide the total energy incident on the junction, integrated over wavelength, with information on the energy per photon lost.


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