Electron impact excitation of SiI

California State University at Los Angeles, Los Angeles, CA 90032, U.S.A.

Received: 17 February 1999
Accepted: 15 April 1999

Abstract

An analytic atomic independent-particle-model is used to generate wave functions for the valence and excited states of the neutral silicon atom. These wave functions are used to calculate generalized oscillator strengths, and from these quantities the cross sections are obtained in the Born approximation. Various excitations from the ground state, 3pP, are considered, and results are presented for electron impact energies up to 5 keV.