Astron. Astrophys. Suppl. Ser.
Volume 138, Number 2, August 1999
|Page(s)||323 - 326|
|Published online||15 August 1999|
Electron impact excitation of SiI
California State University at Los Angeles, Los Angeles, CA 90032, U.S.A.
Accepted: 15 April 1999
An analytic atomic independent-particle-model is used to generate wave functions for the valence and excited states of the neutral silicon atom. These wave functions are used to calculate generalized oscillator strengths, and from these quantities the cross sections are obtained in the Born approximation. Various excitations from the ground state, 3pP, are considered, and results are presented for electron impact energies up to 5 keV.
Key words: atomic data / atomic processes
© European Southern Observatory (ESO), 1999