Issue |
Astron. Astrophys. Suppl. Ser.
Volume 138, Number 2, August 1999
|
|
---|---|---|
Page(s) | 323 - 326 | |
DOI | https://doi.org/10.1051/aas:1999276 | |
Published online | 15 August 1999 |
Electron impact excitation of SiI
California State University at Los Angeles, Los Angeles, CA 90032, U.S.A.
Received:
17
February
1999
Accepted:
15
April
1999
An analytic atomic independent-particle-model is used to generate wave
functions for the valence and excited states of the neutral silicon
atom. These wave functions are used to calculate generalized
oscillator strengths, and from these quantities the cross sections are
obtained in the Born approximation. Various excitations from the
ground state, 3pP
, are considered, and results are presented
for electron impact energies up to 5 keV.
Key words: atomic data / atomic processes
© European Southern Observatory (ESO), 1999