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Astron. Astrophys. Suppl. Ser.
Volume 138, Number 2, August 1999
Page(s) 323 - 326
Published online 15 August 1999
DOI: 10.1051/aas:1999276

Astron. Astrophys. Suppl. Ser. 138, 323-326

Electron impact excitation of Si I

P.S. Ganas

California State University at Los Angeles, Los Angeles, CA 90032, U.S.A.

Received February 17; accepted April 15, 1999


An analytic atomic independent-particle-model is used to generate wave functions for the valence and excited states of the neutral silicon atom. These wave functions are used to calculate generalized oscillator strengths, and from these quantities the cross sections are obtained in the Born approximation. Various excitations from the ground state, 3p2(3P0), are considered, and results are presented for electron impact energies up to 5 keV.

Key words: atomic data -- atomic processes


Copyright The European Southern Observatory (ESO)

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