Free Access
Issue
Astron. Astrophys. Suppl. Ser.
Volume 138, Number 2, August 1999
Page(s) 323 - 326
DOI https://doi.org/10.1051/aas:1999276
Published online 15 August 1999
DOI: 10.1051/aas:1999276



Astron. Astrophys. Suppl. Ser. 138, 323-326

Electron impact excitation of Si I

P.S. Ganas

California State University at Los Angeles, Los Angeles, CA 90032, U.S.A.

Received February 17; accepted April 15, 1999

Abstract:

An analytic atomic independent-particle-model is used to generate wave functions for the valence and excited states of the neutral silicon atom. These wave functions are used to calculate generalized oscillator strengths, and from these quantities the cross sections are obtained in the Born approximation. Various excitations from the ground state, 3p2(3P0), are considered, and results are presented for electron impact energies up to 5 keV.

Key words: atomic data -- atomic processes


Contents

Copyright The European Southern Observatory (ESO)

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